high-power npn silicon transistors . . . designed for use in industrialmilitary power amplifier and switching circuit applications. ? high collectoremitter sustaining voltage e v ceo(sus) = 100 vdc (min) e 2n6338 = 120 vdc (min) e 2N6339 = 140 vdc (min) e 2n6340 = 150 vdc (min) e 2n6341 ? high dc current gain e h fe = 30 120 @ i c = 10 adc = 12 (min) @ i c = 25 adc ? low collectoremitter saturation voltage e v ce(sat) = 1.0 vdc (max) @ i c = 10 adc ? fast switching times @ i c = 10 adc t r = 0.3 ms (max) t s = 1.0 ms (max) t f = 0.25 ms (max) ? complement to 2n643638 ??????????????????????? ??????????????????????? *maximum ratings ????????? ????????? rating ???? ???? symbol ??? ??? 2n6338 ???? ???? 2N6339 ??? ??? 2n6340 ??? ??? 2n6341 ??? ??? unit ????????? ????????? collectorbase voltage ???? ???? v cb ??? ??? 120 ???? ???? 140 ??? ??? 160 ??? ??? 180 ??? ??? vdc ????????? ????????? collectoremitter voltage ???? ???? v ceo ??? ??? 100 ???? ???? 120 ??? ??? 140 ??? ??? 150 ??? ??? vdc ????????? emitterbase voltage ???? v eb ?????????? 6.0 ??? vdc ????????? ? ??????? ? ? ??????? ? ????????? collector current continuous peak ???? ? ?? ? ? ?? ? ???? i c ?????????? ? ???????? ? ? ???????? ? ?????????? 25 50 ??? ? ? ? ? ? ? ??? adc ????????? base current ???? i b ?????????? 10 ??? adc ????????? ? ??????? ? ????????? total device dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ???? p d ?????????? ? ???????? ? ?????????? 200 1.14 ??? ? ? ? ??? watts w/ c ????????? ? ??????? ? ????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ?????????? ? ???????? ? ?????????? 65 to +200 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? q jc ?????? ?????? 0.875 ??? ??? c/w *indicates jedec registered data. preferred devices are on semiconductor recommended choices for future use and best overall value. ? semiconductor components industries, llc, 2001 january, 2001 rev. 8 1 publication order number: 2n6338/d 2n6338 2N6339 2n6340 2n6341 *on semiconductor preferred device 25 ampere power transistors npn silicon 100, 120, 140, 150 volts 200 watts * case 107 to204aa (to3)
2n6338 2N6339 2n6340 2n6341 http://onsemi.com 2 200 75 50 25 0 0 25 50 75 100 125 150 175 200 figure 1. power derating t c , case temperature ( c) p d , power dissipation (watts) 175 150 125 100
2n6338 2N6339 2n6340 2n6341 http://onsemi.com 3 ?????????????????????????????????? ?????????????????????????????????? *electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? characteristic ???? ???? symbol ???? ???? min ???? ???? max ??? ??? unit ?????????????????????????????????? ?????????????????????????????????? off characteristics ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? collectoremitter sustaining voltage (1) 2n6338 (i c = 50 madc, i b = 0) 2N6339 2n6340 2n6341 ???? ? ?? ? ? ?? ? ???? v ceo(sus) ???? ? ?? ? ? ?? ? ???? 100 120 140 150 ???? ? ?? ? ? ?? ? ???? e e e e ??? ? ? ? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? collector cutoff current (v ce = 50 vdc, i b = 0) 2n6338 (v ce = 60 vdc, i b = 0) 2N6339 (v ce = 70 vdc, i b = 0) 2n6340 (v ce = 75 vdc, i b = 0) 2n6341 ???? ? ?? ? ? ?? ? ???? i ceo ???? ? ?? ? ? ?? ? ???? e e e e ???? ? ?? ? ? ?? ? ???? 50 50 50 50 ??? ? ? ? ? ? ? ??? m adc ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? collector cutoff current (v ce = rated v ceo , v eb(off) = 1.5 vdc) (v ce = rated v ceo , v eb(off) = 1.5 vdc, t c = 150 c) ???? ? ?? ? ? ?? ? ???? i cex ???? ? ?? ? ? ?? ? ???? e e ???? ? ?? ? ? ?? ? ???? 10 1.0 ??? ? ? ? ? ? ? ??? m adc madc ??????????????????????? ??????????????????????? collector cutoff current (v cb = rated v cb , i e = 0) ???? ???? i cbo ???? ???? e ???? ???? 10 ??? ??? m adc ??????????????????????? emitter cutoff current (v be = 6.0 vdc, i c = 0) ???? i ebo ???? e ???? 100 ??? m adc ?????????????????????????????????? ?????????????????????????????????? on characteristics (1) ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? dc current gain) (i c = 0.5 adc, v ce = 2.0 vdc) (i c = 10 adc, v ce = 2.0 vdc) (i c = 25 adc, v ce = 2.0 vdc) ???? ? ?? ? ? ?? ? ???? h fe ???? ? ?? ? ? ?? ? ???? 50 30 12 ???? ? ?? ? ? ?? ? ???? e 120 e ??? ? ? ? ? ? ? ??? e ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? collector emitter saturation voltage (i c = 10 adc, i b = 1.0 adc) (i c = 25 adc, i b = 2.5 adc) ???? ? ?? ? ? ?? ? ???? v ce(sat) ???? ? ?? ? ? ?? ? ???? e e ???? ? ?? ? ? ?? ? ???? 1.0 1.8 ??? ? ? ? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? baseemitter saturation voltage (i c = 10 adc, i b = 1.0 adc) (i c = 25 adc, i b = 2.5 adc) ???? ? ?? ? ???? v be(sat) ???? ? ?? ? ???? e e ???? ? ?? ? ???? 1.8 2.5 ??? ? ? ? ??? vdc ??????????????????????? ??????????????????????? baseemitter on voltage (i c = 10 adc, v ce = 2.0 vdc) ???? ???? v be(on) ???? ???? e ???? ???? 1.8 ??? ??? vdc ?????????????????????????????????? ?????????????????????????????????? dynamic characteristics ??????????????????????? ??????????????????????? currentgain e bandwidth product (2) (i c = 1.0 adc, v ce = 10 vdc, f test = 10 mhz) ???? ???? f t ???? ???? 40 ???? ???? e ??? ??? mhz ??????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) ???? c ob ???? e ???? 300 ??? pf ?????????????????????????????????? ?????????????????????????????????? switching characteristics ??????????????????????? ??????????????????????? rise time (v cc 80 vdc, i c = 10adc, i b1 = 1.0 adc, v be(off) = 6.0 vdc) ???? ???? t r ???? ???? e ???? ???? 0.3 ??? ??? m s ??????????????????????? ??????????????????????? storage time (v cc 80 vdc, i c = 10 adc, i b1 = i b2 = 1.0 adc) ???? ???? t s ???? ???? e ???? ???? 1.0 ??? ??? m s ??????????????????????? ??????????????????????? fall time (v cc 80 vdc, i c = 10 adc, i b1 = i b2 = 1.0 adc) ???? ???? t f ???? ???? e ???? ???? 0.25 ??? ??? m s *indicates jedec registered data. (1) pulse test: pulse width 300 m s, duty cycle 2.0%. (2) f t = |h fe | ? f test .
2n6338 2N6339 2n6340 2n6341 http://onsemi.com 4 figure 2. switching time test circuit 1000 0.3 figure 3. turnon time i c , collector current (amp) t, time (ns) 500 100 70 50 10 0.5 0.7 2.0 3.0 7.0 30 + 11 v 0 v cc scope r b 10 ohms - 5.0 v t r , t f 10 ns duty cycle = 1.0% r c 8.0 ohms 20 30 5.0 20 10 m s - 9.0 v 700 200 300 1.0 10 note: for information on figures 3 and 6, r b and r c were varied to obtain desired test conditions. + 80 v 1n4933 t d @ v be(off) = 6.0 v v cc = 80 v i c /i b = 10 t j = 25 c t r figure 4. thermal response t, time (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.03 r(t), effective transient thermal resistance (normalized) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000 500 q jc = r(t) q jc q jc = 0.875 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.05 0.1 0.02 0.01 0.3 3.0 30 300
2n6338 2N6339 2n6340 2n6341 http://onsemi.com 5 curves apply below rated v ceo 100 2.0 figure 5. active region safe operating area 50 5.0 0.01 10 20 70 200 t j = 200 c 2n6338 2N6339 2n6340 2n6341 0.1 10 0.5 i c , collector current (amp) v ce , collector-emitter voltage (volts) 20 0.2 50 100 200 m s 5.0 ms 1.0 ms dc 2.0 0.02 0.05 1.0 3.0 5.0 30 7.0 bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 200 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 200 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 5.0 0.3 figure 6. turnoff time i c , collector current (amp) t, time (s) m 2.0 1.0 0.5 0.3 0.2 0.1 0.07 0.05 0.5 0.7 1.0 2.0 5.0 10 20 30 v cc = 80 v i b1 = i b2 i c /i b = 10 t j = 25 c t s 3.0 0.7 3.0 t f 5000 0.1 figure 7. capacitance v r , reverse voltage (volts) 50 0.5 1.0 2.0 5.0 20 50 100 10 c, capacitance (pf) 700 500 200 100 t j = 25 c c ib c ob 3000 2000 1000 70 300 0.2
2n6338 2N6339 2n6340 2n6341 http://onsemi.com 6 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. style 1: pin 1. base 2. emitter case: collector dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t q y 2 1 u l g b v h case 107 to204aa (to3) issue z
2n6338 2N6339 2n6340 2n6341 http://onsemi.com 7 notes
2n6338 2N6339 2n6340 2n6341 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. 2n6338/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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